mitsubishi semiconductors M54583WP 8-unit 400ma darlignon transistor array jul-2011 pin configuration description M54583WP is eight-circuit collector-current sink type darlington transistor arrays. the circuits are made of pnp and npn transistors. both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. features high breakdown voltage (bv ceo > 50v) high-current driving (i c (max) = 400ma) active l-level input with input clamping diodes applications interfaces between microcomputers and high-voltage, high current drive systems, drives of relays and printers, and mos-bipolar logic ic interfaces function the m54583 is produced by adding pnp transistors to m54523 inputs. eight circuits having active l-level inputs are provided. resistance of 7k and diode are provided in series between each input and pnp transistor base. the input diode is intended to prevent the flow of current from the input to the v cc . without this diode, the current flow from ?h? input to the v cc and the ?l? input circuits is activated, in such case where one of t he inputs of the 8 circuits is ?h? and the others are ?l? to save power consumption. the diode is inserted to prevent such misoperation. this device is most suitable for a driver using nmos ic output especially for the driver of current sink. collector current is 400ma maximum. collector-emitter supply voltage is 50v. package type 18p4x circuit diagram the eight circuits share the v cc and gnd. the diode, indicated with the dotted line, is parasitic, and cannot be used. unit: ?20 + 75 operating temperature t opr ?55 + 125 storage temperature t stg v ?0.5 v cc input voltage v i ma 400 current per circuit output, l collector current i c w 1.79 ta = 25 , when mounted on board power dissipation p d v ?0.5 + 50 output , h collector-emitter voltage v ceo v 10 supply voltage v cc unit ratings conditions parameter symbol absolute maximum ratings (unless otherwise noted, ta = ?20 ~ +75 ) output input output input gnd 2 3 4 5 6 7 8 9 17 16 15 14 13 12 11 10 o2 o3 o4 o5 o6 o7 o8 in2 in3 in4 in5 in6 in7 in8 gnd vcc 1 18 o1 in1 vcc 7k 7k 3k 2.7k 7.2k
mitsubishi semiconductors M54583WP 8-unit 400ma darlignon transistor array jul-2011 2 duty cycle no more than 10% v v cc -3.6 0 ?l? input voltage v il v v cc v cc -0.7 ?h? input voltage v ih 200 0 duty cycle no more than 34% ma 350 0 collector current (current per 1 circuit when 8 circuits are coming on simultaneously) i c v 8 5 4 supply voltage v cc max typ min unit limits parameter symbol recommended operating (unless otherwise noted, ta = ?20 ~ +75 ) a input current i i i c = 200ma i c = 350ma 3500 2000 v ce = 4v, v cc = 5v, i c = 350ma, ta = 25 dc amplification factor hfe ma 3.0 1.9 v cc =5v,v i = vcc 3.6v supply current (one circuit coming on) i cc 600 320 v i = v cc 3.6v 1.6 0.98 v 2.2 1.2 v i = v cc 3.6v collector-emitter saturation voltage v ce(sat) v 50 v s = 50v, v i = 0.2v collector-emitter breakdown voltage v (br)ceo max typ min unit limits test conditions parameter symbol electrical characteristics (unless otherwise noted, ta = 20 75 * the typical values are those measured under ambient temperature (ta) of 25 . there is no guarantee that these valu es are obtained under any conditions. switching characteristics (unless otherwise noted, ta = 25 ? 3200 ? turn-off time t off ? 130 ? c l = 15pf note 1 turn-on time t on max typ min unit limits test conditions parameter symbol note 1 test circuit timing diagram output input 50% 50% on 50% 50% off 50 c l pg input output measured device (1) pulse generator (pg) characteristics: prr = 1khz, tw = 10 s, tr = 6ns, tf = 6ns, z o = 50 ,v i = 0.4 to 4v (2) input-output conditions : r l = 30 , vo = 10v , v cc = 4v (3) electrostatic capacity cl includes floating capacitance at connections and input capacitance at probes v cc r l
mitsubishi semiconductors M54583WP 8-unit 400ma darlignon transistor array jul-2011 3 typical characteristics thermal derating factor characteristics ambient temperature ta( ) power dissipation p d (w) 0 25 50 75 100 0 0.5 1.0 1.5 2.0 output saturation voltage collector current characteristics output saturation voltage v ce(sat) (v) collector current i c (ma) duty-cycle-collector current characteristics duty cycle (%) collector current i c (ma) duty cycle (%) collector current i c (ma 0 20 60 80 100 ?the collector current values represent the current per circuit. ?repeated frequency > 10hz ?the value in the circle represents the value of the simultaneously-operated circuit. ?vcc=5v ?ta = 25 40 duty-cycle-collector current characteristics M54583WP 0 0.5 1.0 1.5 2.0 0 100 200 300 500 400 0 20 60 80 100 0 40 ?the collector current values represent the current per circuit. ?repeated frequency > 10hz ?the value in the circle represents the value of the simultaneously-operated circuit. ?vcc=5v ?ta = 75 0 v i =1.4v v cc =5v input current i i( ma) input characteristics supply voltage-input voltage v cc ?v i (v) 012 45 0 -0.2 -0.6 -0.8 -1.0 3 -0.4 dc amplification factor collector current characteristics collector current i c (ma) dc amplification factor h fe 10 10 7 v cc =5v v ce =4v 5 3 2 3 10 2 4 7 5 3 2 10 7 5 3 2 3 10 2 7 5 3 2 10 1 ta=25 ta=-20 ta=75 ta=75 ta=-20 ta=25 v cc =5v 100 200 300 500 400 100 200 300 500 400 ta=25 ta=-20 ta=75
mitsubishi semiconductors M54583WP 8-unit 400ma darlignon transistor array jul-2011 4 supply current i cc (ma) supply current characteristics supply voltage v cc (v) 024 810 0 1 2 4 5 6 ta=25 ta=-20 ta=75 v i =0v 3 collector current i c (ma) grounded emitter transfer characteristics supply voltage-input voltage v cc ?v i (v) 01234 0 100 200 300 400 ta=25 ta=-20 ta=75 v cc =4v v ce =4v
mitsubishi semiconductors M54583WP 8-unit 400ma darlignon transistor array jun-2011 5 package outline
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